View H7N0312LM_473161.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
H7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1572A(Z) 2nd. Edition Aug. 2002 Features
* Low on-resistance * RDS(on) = 2.6 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4 D
4
G 1 S
1
2
3
1
H7N0312LS
2 3
2
3
H7N0312LM 1. Gate 2. Drain 3. Source 4. Drain
H7N0312LD
H7N0312LD, H7N0312LS, H7N0312LM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg
Note 2 Note 1
Ratings 30 20 85 340 85 125 1.0 150 -55 to +150
Unit V V A A A W C/W C C
ch-c
Rev.1, Aug. 2002, page 2 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Electrical Characteristics
(Ta = 25C)
Item Symbol Min 30 20 -- -- 1.0 -- -- |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF 75 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.6 4.0 125 6900 1750 820 115 24 24 45 380 125 50 0.92 75 Max -- -- 10 10 2.5 3.3 5.8 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/ dt = 50A/s Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V
Note1 Note1 Note1
Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on)
ID = 42.5 A, VGS = 10 V ID = 42.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 85 A VGS = 10 V, ID = 42.5 A RL = 0.24 Rg = 4.7
ID = 42.5 A, VGS = 4.5 V
Note1
Body-drain diode reverse recovery trr time Notes: 1. Pulse test
Rev.1, Aug. 2002, page 3 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Main Characteristics
Power vs. Temperature Derating 160 1000 Maximum Safe Operation Area
10
1m s 100 s
Channel Dissipation Pch (W)
s
ID (A)
120
100
DC
Op
era
Drain Current
10 1
tio PW n =
80
10
ms
40
Operation in this area is limited by RDS(on)
0.1 Tc = 25C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V)
0
50
100
150 Tc (C)
200
Case Temperature
Typical Output Characteristics 100 10 V 5V 4V 100 3.5 V 3.2 V 60 3.0 V 40 2.8 V 20 Pulse Test 0
VGS = 2.5 V
Typical Transfer Characteristics V DS = 10 V Pulse Test
Drain Current ID (A)
ID Drain Current
(A)
80
80
60 Tc = 75C 25C -25C 0 1 2 3 Gate to Source Voltage 4 VGS 5 (V)
40
20
2 4 6 Drain to Source Voltage
8 VDS
10 (V)
Rev.1, Aug. 2002, page 4 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30
(mV)
Pulse Test
Drain to Source Voltage VDS(on)
400
300
Drain to Source on State Resistance RDS(on) (m)
500
10 VGS = 4.5 V 3 10 V 1 0.1 0.3 1 3 10 30 100 300 1000 Drain Current ID (A)
200
I D = 50 A 20 A 10 A
100
0
4 8 12 Gate to Source Voltage
16 VGS (V)
20
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 7 Pulse Test I D = 50 A 6 5 4 3 2 10 V 1 0 -25 0 25 50 75 100 125 150 (C) 10 A, 20 A, 50 A V GS = 4.5 V
Forward Transfer Admittance vs. Drain Current 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 V DS = 10 V Pulse Test 10 ID (A) 30 100 25C 75C Tc = -25C
10 A, 20 A
Case Temperature Tc
Drain Current
Rev.1, Aug. 2002, page 5 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Body-Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF)
10000
50
3000 Coss 1000 Crss 300 VGS = 0 f = 1 MHz 100
20 di / dt = 50 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 (A) 100
10 0.1
0
5
10
15
20
25 (V)
30
Reverse Drain Current IDR
Drain to Source Voltage VDS
50 VDS (V)
Dynamic Input Characteristics I D = 85 A VDD = 5 V 10 V 25 V V DS
20 (V)
1000
Switching Characteristics tr
V GS = 10 V , VDS = 10 V 500 Rg = 4.7 , duty < 1 % Switching Time t (ns)
Drain to Source Voltage
30
12
Gate to Source Voltage
V GS
VGS
40
16
200 100 50 t d(on)
t d(off) tf
20
8
10
V DD = 25 V 10 V 5V 40 80 120 160
4 0 200
20 10 0.1
0
Gate Charge
Qg (nc)
0.3 1 3 Drain Current
10 30 ID (A)
100
Rev.1, Aug. 2002, page 6 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
100
80 10 V 60 5V V GS = 0 V
40
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 (V) Source to Drain Voltage VSD
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05 0.02 e 1 0.0 puls ot h 1s
ch - c(t) = s (t) * ch - c ch - c = 1.0C/ W, Tc = 25C
PDM PW T
0.03
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.1, Aug. 2002, page 7 of 11
H7N0312LD, H7N0312LS, H7N0312LM
Package Dimensions
* H7N0312LD
Unit: mm
10.2 0.3
(1.4)
4.44 0.2 1.3 0.15
0.2 0.86 + 0.1 -
2.54 0.5
2.54 0.5
11.0 0.5
1.37 0.2 1.3 0.2
11.3 0.5
8.6 0.3
10.0
+ 0.3 - 0.5
2.49 0.2
0.4 0.1
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (L) -- -- 1.4 g
Rev.1, Aug. 2002, page 8 of 11
H7N0312LD, H7N0312LS, H7N0312LM
* H7N0312LS
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
0.2 0.1 + 0.1 -
7.8 7.0
1.37 0.2
2.49 0.2
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
2.2
1.3 0.2 2.54 0.5
0.4 0.1
2.54 0.5
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(1) -- -- 1.3 g
Rev.1, Aug. 2002, page 9 of 11
1.7
1.3 0.2
7.8 6.6
H7N0312LD, H7N0312LS, H7N0312LM
* H7N0312LM
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(2.3)
0.2 0.1 + 0.1 -
7.8 7.0
1.37 0.2
2.49 0.2
2.2
2.54 0.5
2.54 0.5
0.3 5.0 + 0.5 -
1.3 0.2
0.2 0.86 + 0.1 -
0.4 0.1
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(2) -- -- 1.35 g
Rev.1, Aug. 2002, page 10 of 11
1.7
1.3 0.2
7.8 6.6
H7N0312LD, H7N0312LS, H7N0312LM
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Aug. 2002, page 11 of 11

▲Up To Search▲

Price & Availability of H7N0312LM

	To Download H7N0312LM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .